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Avalanche-induced thermal instability in Ldmos transistors
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2002
Year
Unknown Venue
Device ModelingElectrical EngineeringEngineeringLdmos TransistorsThermal Instability MechanismElectronic EngineeringParasitic Bipolar TransistorApplied PhysicsBias Temperature InstabilityCircuit ReliabilityArea LimitsMicroelectronicsSemiconductor Device
Safe operating area limits for large Ldmos are shown to be due to a thermal instability mechanism initiated by avalanche generated carriers which turn-on the parasitic bipolar transistor. An analytic model is described and is shown to agree well with experimental data.