Publication | Closed Access
SCR-LDMOS. A novel LDMOS device with ESD robustness
50
Citations
1
References
2002
Year
Unknown Venue
Low-power ElectronicsLateral LdmosfetElectrical EngineeringEngineeringHigh Voltage EngineeringElectrostatic DischargePower ElectronicsMicroelectronicsEsd RobustnessHigh Degree
A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics.
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