Lateral thinking about power devices (LDMOS)

Abstract

BiCMOS Power technology LDMOS are reviewed with respect to category and structure definition and briefly as to how the structures relate to figure of merit performance. Stepped gate oxide devices are introduced making use of popular dual gate technologies and exhibit improved R/sub sp/ vs. BV performance of up to 30% at low V/sub gs/ without sacrifice of BV. Production use of thick copper plated bussing up to 25 /spl mu/m thick with R/sub sh/=0.8 m/spl Omega//sq is revealed for power, enabling up to 40% efficiency improvement on LDMOS power transistors.