Antoon Theuwis

Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers

Ben Depuydt, Antoon Theuwis, Igor Romandic · Materials Science in Semiconductor Processing · 2006 · 117 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +7

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

Bart Onsia, Thierry Conard, Stefan De Gendt et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2005 · 81 citations

Engineering, Belgium 2, Chemistry +16

Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Frederik Leys, Renaud Bonzom, B. Kaczer et al. · Materials Science in Semiconductor Processing · 2006 · 53 citations

Materials Science, Ge Surface Segregation, Engineering +9

Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl– ions

I. M. Huygens, Antoon Theuwis, W. P. Gomes et al. · Physical Chemistry Chemical Physics · 2002 · 29 citations

Chemical Engineering, N-gan Electrode, M H2so4 +15

Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

Steven Hens, Jan Vanhellemont, Dirk Poelman et al. · Applied Physics Letters · 2005 · 28 citations

Engineering, Crystal Growth Technology, Theoretical Evidence +17