C.S. Webster

Current status and future trends of SiGe BiCMOS technology

D.L. Harame, D. Ahlgren, Douglas Coolbaugh et al. · IEEE Transactions on Electron Devices · 2001 · 167 citations

Electrical Engineering, Engineering, Vlsi Design +12

RF linearity characteristics of SiGe HBTs

Guofu Niu, Qingqing Liang, John D. Cressler et al. · IEEE Transactions on Microwave Theory and Techniques · 2001 · 96 citations

Electrical Engineering, Semiconductor Device, Engineering +13

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

Guofu Niu, John D. Cressler, Shiming Zhang et al. · IEEE Transactions on Electron Devices · 2001 · 92 citations

Device Modeling, Electrical Engineering, Engineering +15

RF potential of a 0.18-μm CMOS logic device technology

Joachim N. Burghartz, M. Hargrove, C.S. Webster et al. · IEEE Transactions on Electron Devices · 2000 · 76 citations

Low-power Electronics, Electrical Engineering, Engineering +11

SiGe power HBT's for low-voltage, high-performance RF applications

Joachim N. Burghartz, Jean‐Olivier Plouchart, K.A. Jenkins et al. · IEEE Electron Device Letters · 1998 · 49 citations

Engineering, Integrated Circuits, Power Electronics +19