J. Lee

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried et al. · 2012 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +17

Double spin-torque magnetic tunnel junction devices for last-level cache applications

G. Hu, Christopher Safranski, J. Z. Sun et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Selective dry etching in a high density plasma for 0.5 μm complementary metal–oxide–semiconductor technology

John W. Givens, J. Lee, O.J. Cain et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +17

Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node

T. Nogami, Xingxing Zhang, James J. Kelly et al. · 2017 · 30 citations

Natural Sciences, Materials Engineering, Materials Science +10

Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL

D. Edelstein, H. Rathore, C. Davis et al. · 2004 · 23 citations

Engineering, Electrical Engineering, Materials Science +17