Y. Nashimoto

Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage

K. Asano, Yosuke Miyoshi, K. Ishikura et al. · 2002 · 66 citations

Engineering, Electrical Engineering, Materials Engineering +14

Electron and hole impact ionization coefficients in GaAs-Al<i>x</i>Ga1−<i>x</i>As superlattices

F-Y. Juang, Utpal Das, Y. Nashimoto et al. · Applied Physics Letters · 1985 · 54 citations · Full text

Engineering, Materials Science, Physics +17

Si donor neutralization in high-purity GaAs

N. Pan, B. Lee, Sukanta Bose et al. · Applied Physics Letters · 1987 · 42 citations · Full text

Engineering, Materials Science, Physics +17

A detailed investigation of the D-X center and other trap levels in GaAs-Al_xGa_1-xAs modulation-doped heterostructures grown by molecular-beam epitaxy

S. Dhar, Won-Pyo Hong, P. Bhattacharya et al. · IEEE Transactions on Electron Devices · 1986 · 34 citations

Engineering, Electrical Engineering, Materials Science +16

Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-Al<i>x</i>Ga1−<i>x</i>As single quantum wells

Feng-Yuh Juang, Y. Nashimoto, P. Bhattacharya · Journal of Applied Physics · 1985 · 33 citations · Full text

Natural Sciences, Materials Science, Physics +17