Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage

Abstract

This paper reports novel high power AlGaAs/GaAs heterostructure FET with a field-modulating plate (FP-HFET), which accomplished dramatic increase of the gate-drain breakdown voltage with greatly suppressed drain-current pulse-dispersion characteristics. The fabricated FETs exhibited excellent power performance up to 35 V at L-band, delivering the maximum power density of 1.7 W/mm.