Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage

K. Asano, Yosuke Miyoshi, K. Ishikura, +3

Field-modulating PlateElectrical EngineeringEngineeringFabricated FetsNanoelectronics +8

Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers

I. Takenaka, K. Ishikura, H. Takahashi, +3

IEEE Transactions on Microwave Theory and Techniques

Wideband Microwave SignalsElectrical EngineeringEngineeringRf SemiconductorRadio Frequency +13

Synthesis and optical and electrochemical properties of thermotropic, liquid‐crystalline, semirigid copolyesters based on 2,5‐diphenyl‐1,3,4‐thiadiazole units

Moriyuki Sato, Yuji Tada, Shinji Nakashima, +3

Journal of Polymer Science Part A Polymer Chemistry

Macromolecular ChemistryLc PropertiesEngineeringOrganic ElectronicsOrganic Chemistry +15

L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations

I. Takenaka, K. Ishikura, H. Takahashi, +8

IEEE Journal of Solid-State Circuits

Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering +9

A low-distortion 230 W GaAs power FP-HFET operated at 22 V for cellular base station

K. Matsunaga, K. Ishikura, I. Takenaka, +5

Wide-bandgap SemiconductorField-modulating PlateElectrical EngineeringEngineeringRf Semiconductor +11

A 240 W power heterojunction FET with high efficiency for W-CDMA base stations

I. Takenaka, K. Ishikura, Kei Takahashi, +6

Electrical EngineeringSecond Harmonic TuningEngineeringRadio FrequencyRf Semiconductor +10

A 240 W doherty GaAs power FET amplifier with high efficiency and low distortion for W-CDMA base stations

I. Takenaka, H. Takahashi, K. Ishikura, +3

Load Impedance ShiftElectrical EngineeringEngineeringRf SemiconductorLow Distortion +7

100 W L-band GaAs power FP-HFET operated at 30 V

Nobukazu Sakura, K. Matsunaga, K. Ishikura, +5

Field-modulating PlateElectrical EngineeringEngineeringHigh-frequency DeviceElectronic Engineering +7

Growth Condition Dependence of Carbon Reduction in GaAs Chemical Beam Epitaxy Using Trisdimethylamino-Arsine and Trimethylgallium

K. Ishikura, Atsushi Takeuchi, Megumu Kurihara, +2

Japanese Journal of Applied Physics

Materials ScienceElectrical EngineeringGrowth Condition DependenceEngineeringCrystalline Defects +10

Low distortion high power GaAs pseudomorphic heterojunction FETs for L/S-band digital cellular base stations

I. Takenaka, K. Ishikura, H. Takahashi, +2

Electrical EngineeringEngineeringRf SemiconductorSecond Harmonic ImpedanceElectronic Engineering +5