T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <tex-math notation="TeX">$f_{\rm MAX}$ </tex-math></inline-formula>

Yasuhiro Murase, Kazunori Asano, I. Takenaka, +3

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringImproved Breakdown VoltageEngineeringGan Hfets +9

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

I. Takenaka, Kohji Ishikura, Kazunori Asano, +5

IEEE Transactions on Microwave Theory and Techniques

Gan Field-effect TransistorMicrowave CircuitsElectrical EngineeringEngineeringRf Semiconductor +8

Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers

I. Takenaka, K. Ishikura, H. Takahashi, +3

IEEE Transactions on Microwave Theory and Techniques

Wideband Microwave SignalsElectrical EngineeringEngineeringRf SemiconductorRadio Frequency +13

L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations

I. Takenaka, K. Ishikura, H. Takahashi, +8

IEEE Journal of Solid-State Circuits

Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering +9

Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Yuji Ando, Kohji Ishikura, Yasuhiro Murase, +5

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSi SubstrateEngineering +8

A Distortion-Cancelled Doherty High-Power Amplifier Using 28-V GaAs Heterojunction FETs for W-CDMA Base Stations

I. Takenaka, Kohji Ishikura, H. Takahashi, +5

IEEE Transactions on Microwave Theory and Techniques

Electrical EngineeringPeak AmplifiersEngineeringRf SemiconductorElectronic Engineering +5

A low-distortion 230 W GaAs power FP-HFET operated at 22 V for cellular base station

K. Matsunaga, K. Ishikura, I. Takenaka, +5

Wide-bandgap SemiconductorField-modulating PlateElectrical EngineeringEngineeringRf Semiconductor +11

A 240 W power heterojunction FET with high efficiency for W-CDMA base stations

I. Takenaka, K. Ishikura, Kei Takahashi, +6

Electrical EngineeringSecond Harmonic TuningEngineeringRadio FrequencyRf Semiconductor +10

A 240 W doherty GaAs power FET amplifier with high efficiency and low distortion for W-CDMA base stations

I. Takenaka, H. Takahashi, K. Ishikura, +3

Load Impedance ShiftElectrical EngineeringEngineeringRf SemiconductorLow Distortion +7

100 W L-band GaAs power FP-HFET operated at 30 V

Nobukazu Sakura, K. Matsunaga, K. Ishikura, +5

Field-modulating PlateElectrical EngineeringEngineeringHigh-frequency DeviceElectronic Engineering +7