Kazunori Asano

T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <tex-math notation="TeX">$f_{\rm MAX}$ </tex-math></inline-formula>

Yasuhiro Murase, Kazunori Asano, I. Takenaka et al. · IEEE Electron Device Letters · 2014 · 39 citations

Wide-bandgap Semiconductor, Electrical Engineering, Improved Breakdown Voltage +11

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

I. Takenaka, Kohji Ishikura, Kazunori Asano et al. · IEEE Transactions on Microwave Theory and Techniques · 2014 · 31 citations

Gan Field-effect Transistor, Microwave Circuits, Electrical Engineering +10

Theoretical and Experimental Study of Inverse Piezoelectric Effect in AlGaN/GaN Field-Plated Heterostructure Field-Effect Transistors

Yuji Ando, Kohji Ishikura, Katsumi Yamanoguchi et al. · IEEE Transactions on Electron Devices · 2012 · 14 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Yuji Ando, Kohji Ishikura, Yasuhiro Murase et al. · IEEE Transactions on Electron Devices · 2013 · 14 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

A Distortion-Cancelled Doherty High-Power Amplifier Using 28-V GaAs Heterojunction FETs for W-CDMA Base Stations

I. Takenaka, Kohji Ishikura, H. Takahashi et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 14 citations

Electrical Engineering, Peak Amplifiers, Engineering +7