H. Takahashi

The anode surface temperature of CuCr contacts at the limit of current interruption

Kenji Watanabe, Junichi Sato, K. Kagenaga et al. · IEEE Transactions on Plasma Science · 1997 · 59 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Influence of electrode area on the conditioning effect in vacuum

T. Shioiri, R. Kamikawaji, E. Kaneko et al. · IEEE Transactions on Dielectrics and Electrical Insulation · 1995 · 41 citations

Different Surface Areas, Electrical Engineering, Dielectrics +13

Impulse Voltage Field Emission Characteristics and Breakdown Dependency Upon Field Strength in Vacuum Gaps

T. Shioiri, I. Ohshima, Masaki Honda et al. · IEEE Transactions on Power Apparatus and Systems · 1982 · 39 citations

Electrical Engineering, High Voltage Impulses, Engineering +7

T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <tex-math notation="TeX">$f_{\rm MAX}$ </tex-math></inline-formula>

Yasuhiro Murase, Kazunori Asano, I. Takenaka et al. · IEEE Electron Device Letters · 2014 · 39 citations

Wide-bandgap Semiconductor, Electrical Engineering, Improved Breakdown Voltage +11

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

I. Takenaka, Kohji Ishikura, Kazunori Asano et al. · IEEE Transactions on Microwave Theory and Techniques · 2014 · 31 citations

Gan Field-effect Transistor, Microwave Circuits, Electrical Engineering +10