Yasuhiro Murase

T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <tex-math notation="TeX">$f_{\rm MAX}$ </tex-math></inline-formula>

Yasuhiro Murase, Kazunori Asano, I. Takenaka et al. · IEEE Electron Device Letters · 2014 · 39 citations

Wide-bandgap Semiconductor, Electrical Engineering, Improved Breakdown Voltage +11

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

I. Takenaka, Kohji Ishikura, Kazunori Asano et al. · IEEE Transactions on Microwave Theory and Techniques · 2014 · 31 citations

Gan Field-effect Transistor, Microwave Circuits, Electrical Engineering +10

Radiation measurements by a cryogenic <i>pn</i> junction InSb detector with operating temperatures up to 115 K

Ikuo Kanno, Fumiki Yoshihara, Ryo Nouchi et al. · Review of Scientific Instruments · 2003 · 19 citations

Engineering, Radiation Measurements, Am241 Alpha Particles +20

Formation and characterization of self-organized CdSe quantum dots

Kenzo Maehashi, Nobuhiro Yasui, Yasuhiro Murase et al. · Journal of Electronic Materials · 2000 · 15 citations

Ii-vi Semiconductor, Engineering, Nanomaterials +6

Temperature dependence of photoluminescence spectra of self-organized CdSe quantum dots

Yasuhiro Murase, Takeshi Ota, Nobuhiro Yasui et al. · Journal of Crystal Growth · 2000 · 14 citations

Ii-vi Semiconductor, Photoluminescence, Engineering +9