Utpal Das

Electron and hole impact ionization coefficients in GaAs-Al<i>x</i>Ga1−<i>x</i>As superlattices

F-Y. Juang, Utpal Das, Y. Nashimoto et al. · Applied Physics Letters · 1985 · 54 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Nonlinear effects in coplanar GaAs/InGaAs strained-layer superlattice directional couplers

Utpal Das, Yi Chen, P. Bhattacharya · Applied Physics Letters · 1987 · 26 citations

Semiconductors, Photonics, Categoryquantum Electronics +13

Investigation of the interface region produced by molecular beam epitaxial regrowth

Dipankar Biswas, Paul R. Berger, Utpal Das et al. · Journal of Electronic Materials · 1989 · 24 citations

Materials Science, Engineering, Electron-beam Lithography +7

Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief review

P. Bhattacharya, Utpal Das, Feng-Yuh Juang et al. · Solid-State Electronics · 1986 · 24 citations · Full text

Materials Science, Semiconductors, Optical Materials +9

Experimental Study of the Effects of Environmental and Fog Condensation Nuclei Parameters on the Rate of Fog Formation and Dissipation Using a New Laboratory Scale Fog Generation Facility

Vivek Pratap Singh, Tarun Gupta, S. N. Tripathi et al. · Aerosol and Air Quality Research · 2011 · 24 citations · Full text

Fog Formation, Engineering, Aerosol Formation +12