Applied Physics Letters · 1987 · 26 citations · 4 references
EngineeringMaterials SciencePhysicsOptoelectronicsPhotonicsSemiconductor MaterialsDirectional CouplersNonlinear Optical MaterialsNonlinear OpticsOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsMolecular Beam EpitaxyNonlinear EffectsNonlinear Optical ResponseNonlinear Refractive IndexQuantum Well HeterostructuresStrain EffectsStrained Quantum WellsStrained-layer Heterostructures
We report on the performance characteristics of InGaAs/GaAs strained-layer superlattice coplanar ridge-type directional couplers realized by molecular beam epitaxy. The measured power transfer characteristics with 1.15 μm incident photoexcitation demonstrate nonlinear coupling due to absorption associated with the tails of the excitonic resonances in the quantum wells. From a theoretical fit of the measured data, the nonlinear refractive index coefficient, n2, of the multiquantum well is found to be 2.25×10−7 cm2/W. This agrees very well with a value of n2=1.9×10−7 cm2/W obtained independently on the same material from interferometric measurements.
4
All optical multiple-quantum-well waveguide switch
P. Li Kam Wa, J.E. Sitch, N. J. Mason et al. · Electronics Letters · 1985 · 220 citations