Feng-Yuh Juang - Concepedia

Author

Feng-Yuh Juang

University of Michigan

Also Known As

F. -Y. Juang, F. Y. Juang, F.-Y. Juang, F.Y. Juang, Feng-Yuh Juang

Publications

Citations

H-Index

Concepts

All Affiliations

University of Michigan National Chung Shan Institute of Science and Technology University of Calcutta

About

Feng-Yuh Juang is an author at University of Michigan specializing in applied physics, engineering, and semiconductors.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	978
2	Applied Physics	8	8	978
3	Electrical Engineering	3	3	62
4	Chemical Engineering	1	1	10
5	Chemistry	1	1	18

Feng-Yuh Juang

Publications

978

Citations

H-Index

Page 1

	Year	Citations
Quasiperiodic GaAs-AlAs Heterostructures R. Merlín, K. Bajema, Roy Clarke, Physical Review Letters Materials ScienceFibonacci SequenceIi-vi SemiconductorEngineeringPhysics	1985	831
A detailed investigation of the D-X center and other trap levels in GaAs-Al<sub>x</sub>Ga<sub>1-x</sub>As modulation-doped heterostructures grown by molecular-beam epitaxy S. Dhar, Won-Pyo Hong, P. Bhattacharya, IEEE Transactions on Electron Devices SemiconductorsD-x CenterElectrical EngineeringThermal Ionization EnergyEngineering	1986	34
Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-Al<i>x</i>Ga1−<i>x</i>As single quantum wells Feng-Yuh Juang, Y. Nashimoto, P. Bhattacharya Journal of Applied Physics SemiconductorsPhotoluminescenceEngineeringPhysicsCrystalline Defects	1985	33
Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief review P. Bhattacharya, Utpal Das, Feng-Yuh Juang, Solid-State Electronics Materials ScienceSemiconductorsOptical MaterialsMaterial PropertiesEngineering	1986	24
Passivation with SiO2 on HgCdTe by direct photochemical-vapor deposition* Jia-Hao Lin, Yurong Su, Shoou‐Jinn Chang, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Optical MaterialsEngineeringPhoto-electrochemical CellOptoelectronic DevicesThin Film Process Technology	1994	18
Dependence of deep-level parameters in ion-implanted GaAs MESFET's on material preparation S. Dhar, P. Bhattacharya, Feng-Yuh Juang, IEEE Transactions on Electron Devices Materials ScienceDeep-level ParametersElectrical EngineeringActivation EnergyEngineering	1986	15
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers Feng-Yuh Juang, Won-Pyo Hong, Paul R. Berger, Journal of Crystal Growth Ingaas/gaas MultilayersElectrical EngineeringEngineeringApplied PhysicsCondensed Matter Physics	1987	13
Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition H. D. Chen, Chun–Yen Chang, Kuan-Chung Lin, Journal of Applied Physics Materials ScienceMaterials EngineeringChemical EngineeringElectronic DevicesSemiconductors	1993	10

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