Feng-Yuh Juang

Quasiperiodic GaAs-AlAs Heterostructures

R. Merlín, K. Bajema, Roy Clarke et al. · Physical Review Letters · 1985 · 831 citations

Materials Science, Fibonacci Sequence, Ii-vi Semiconductor +11

A detailed investigation of the D-X center and other trap levels in GaAs-Al_xGa_1-xAs modulation-doped heterostructures grown by molecular-beam epitaxy

S. Dhar, Won-Pyo Hong, P. Bhattacharya et al. · IEEE Transactions on Electron Devices · 1986 · 34 citations

Semiconductors, D-x Center, Electrical Engineering +13

Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-Al<i>x</i>Ga1−<i>x</i>As single quantum wells

Feng-Yuh Juang, Y. Nashimoto, P. Bhattacharya · Journal of Applied Physics · 1985 · 33 citations · Full text

Semiconductors, Photoluminescence, Engineering +14

Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief review

P. Bhattacharya, Utpal Das, Feng-Yuh Juang et al. · Solid-State Electronics · 1986 · 24 citations · Full text

Materials Science, Semiconductors, Optical Materials +9

Passivation with SiO2 on HgCdTe by direct photochemical-vapor deposition*

Jia-Hao Lin, Yurong Su, Shoou‐Jinn Chang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1994 · 18 citations

Optical Materials, Engineering, Photo-electrochemical Cell +18