H. Cho - Concepedia

Author

H. Cho

University of Florida ORCID

Also Known As

H. Cho, Hayeong Cho

Publications

974

Citations

H-Index

Concepts

All Affiliations

University of Florida Sandia National Laboratories Stevenson University National Central University IBM Research - Almaden

About

H. Cho is an author at University of Florida specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	846
2	Applied Physics	11	13	479
3	Education	1	1	318
4	Medicine	1	1	14
5	Biomolecular Engineering	1	1	14

H. Cho

Publications

868

Citations

H-Index

Page 1

	Year	Citations
A three-step method for the de-embedding of high-frequency S-parameter measurements H. Cho, D.E. Burk IEEE Transactions on Electron Devices EngineeringMeasurementProbe PadsSpectrum EstimationEducation	1991	318
Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor Jung Han, Albert G. Baca, R. J. Shul, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringSi DopingMg Acceptors	1999	87
High voltage GaN Schottky rectifiers G. Dang, A.P. Zhang, F. Ren, IEEE Transactions on Electron Devices Low BiasesWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2000	84
Oxygen diffusion into SiO2-capped GaN during annealing S. J. Pearton, H. Cho, J. R. LaRoche, Applied Physics Letters Materials ScienceSio 2Wide-bandgap SemiconductorEngineeringO17 Diffusion Profiles	1999	79
Relative merits of Cl2 and CO/NH3 plasma chemistries for dry etching of magnetic random access memory device elements K. B. Jung, H. Cho, Yoon‐Bong Hahn, Journal of Applied Physics Non-volatile MemoryMagnetic PropertiesEngineeringChemistryPlasma Processing	1999	39
Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers A. P. Zhang, G. Dang, F. Ren, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringEngineeringElectronic Engineering	2000	38
Plasma chemistries for high density plasma etching of SiC J. Hong, R. J. Shul, L. Zhang, Journal of Electronic Materials Materials ScienceHigh DensityEngineeringApplied PhysicsPlasma Etching	1999	36
Simultaneous Determination of Flow Stress and Interface Friction by Finite Element Based Inverse Analysis Technique H. Cho, G. Ngalle, Taylan Altan CIRP Annals Finite Element MethodEngineeringFlow StressFluid-structure InteractionMechanics	2003	35
Surface and bulk leakage currents in high breakdown GaN rectifiers F. Ren, A.P. Zhang, G. Dang, Solid-State Electronics Bulk Leakage CurrentsElectrical EngineeringEngineeringHigh Voltage EngineeringApplied Physics	2000	31
Direct-current characteristics of <i>pnp</i> AlGaN/GaN heterojunction bipolar transistors A. P. Zhang, G. Dang, F. Ren, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringApplied Physics	2000	24

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