K. B. Jung - Concepedia

Author

K. B. Jung

University of Florida

Also Known As

K. B. Jung, K.-B. Jung, K.B Jung, K.B. Jung, Kwangchun Jung, Kwanhwi Jung

Publications

786

Citations

H-Index

Concepts

All Affiliations

University of Florida Sandia National Laboratories IBM Research - Almaden Plasma Processes (United States)Honeywell (United States)

About

K. B. Jung is an author at University of Florida specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	25	586
2	Applied Physics	15	24	572
3	Chemical Engineering	10	10	214
4	Chemistry	5	5	151
5	Natural Sciences	2	2	24

K. B. Jung

Publications

679

Citations

H-Index

Page 1

	Year	Citations
Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor Jung Han, Albert G. Baca, R. J. Shul, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringSi DopingMg Acceptors	1999	87
300°C GaN/AlGaN Heterojunction Bipolar Transistor F. Ren, C. R. Abernathy, J. M. Van Hove, MRS Internet Journal of Nitride Semiconductor Research	1998	73
Stress Management in Sub-90-nm Transistor Architecture Reza Arghavani, Zhaohe Yuan, Nilesh P. Ingle, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringDielectric Films	2004	41
High rate dry etching of Ni0.8Fe0.2 and NiFeCo K. B. Jung, E. S. Lambers, J. R. Childress, Applied Physics Letters Materials ScienceMaterials EngineeringChemical EngineeringEngineeringMicrofabrication	1997	40
Relative merits of Cl2 and CO/NH3 plasma chemistries for dry etching of magnetic random access memory device elements K. B. Jung, H. Cho, Yoon‐Bong Hahn, Journal of Applied Physics Non-volatile MemoryMagnetic PropertiesEngineeringChemistryPlasma Processing	1999	39
Plasma chemistries for high density plasma etching of SiC J. Hong, R. J. Shul, L. Zhang, Journal of Electronic Materials Materials ScienceHigh DensityEngineeringApplied PhysicsPlasma Etching	1999	36
Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN Yoon‐Bong Hahn, David C. Hays, S. M. Donovan, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceChemical EngineeringElectrical EngineeringEngineeringInn Etching	1999	33
GaN/AlGaN HBT fabrication F. Ren, Jung Han, R. Hickman, Solid-State Electronics Electrical EngineeringEngineeringGan/algan Hbt FabricationNanoelectronicsApplied Physics	2000	31
GaN PN junction issues and developments R. Hickman, J. M. Van Hove, P. P. Chow, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor	2000	27
Development of electron cyclotron resonance and inductively coupled plasma high density plasma etching for patterning of NiFe and NiFeCo K. B. Jung, E. S. Lambers, J. R. Childress, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringElectron Cyclotron ResonanceChemistryPlasma ProcessingCl2/ar Plasma Chemistry	1998	26

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