Per‐Erik Hellström

Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

J. Seger, Per‐Erik Hellström, Jun Lü et al. · Applied Physics Letters · 2005 · 43 citations

Engineering, Lateral Encroachment, Silicon On Insulator +16

Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs

Julius Hållstedt, Per‐Erik Hellström, Henry H. Radamson · Thin Solid Films · 2008 · 39 citations

Electrical Engineering, Deca-nanometer Mosfets, Engineering +13

550 °C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization

S. Hou, Per‐Erik Hellström, Carl‐Mikael Zetterling et al. · IEEE Electron Device Letters · 2016 · 36 citations

Semiconductor Technology, Room Temperature, Electrical Engineering +12

A robust spacer gate process for deca-nanometer high-frequency MOSFETs

Julius Hållstedt, Per‐Erik Hellström, Z. Zhang et al. · Microelectronic Engineering · 2005 · 34 citations

Electrical Engineering, Engineering, High-frequency Device +5

Reduced self-heating by strained silicon substrate engineering

A.G. O’Neill, R. Agaiby, Sarah H. Olsen et al. · Applied Surface Science · 2008 · 33 citations

Engineering, Microfabrication, Bias Temperature Instability +6