550 °C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization

Abstract

The p-i-n ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and characterized from room temperature (RT) to 550 °C. Due to bandgap narrowing at higher temperatures, the photocurrent of the photodiode increases by 9 times at 365 nm and reduces by 2.6 times at 275 nm from RT to 550 °C. Moreover, a 4H-SiC p-i-n photodiode array has been fabricated. Each column and row of the array is separately connected by two-layer metallization.