R. Agaiby

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Goutam Kumar Dalapati, Sanatan Chattopadhyay, K.S.K. Kwa et al. · IEEE Transactions on Electron Devices · 2006 · 78 citations

Electrical Engineering, Engineering, Channel Thickness +13

6F<sup>2</sup> buried wordline DRAM cell for 40nm and beyond

T. Schloesser, Frank Jakubowski, Johannes von Kluge et al. · 2008 · 46 citations

Electrical Engineering, Memory Architecture, Engineering +11

Reduced self-heating by strained silicon substrate engineering

A.G. O’Neill, R. Agaiby, Sarah H. Olsen et al. · Applied Surface Science · 2008 · 33 citations

Engineering, Microfabrication, Bias Temperature Instability +6

Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Sarah H. Olsen, Liang Yan, R. Agaiby et al. · Microelectronic Engineering · 2008 · 24 citations

Electrical Engineering, Engineering, Bias Temperature Instability +4

Gate leakage mechanisms in strained Si devices

Liang Yan, Sarah H. Olsen, Mohammed Benali Kanoun et al. · Journal of Applied Physics · 2006 · 20 citations

Gate Leakage Mechanisms, Electrical Engineering, Engineering +10