Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Goutam Kumar Dalapati, Sanatan Chattopadhyay, K.S.K. Kwa, +6

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringChannel ThicknessGe Out-diffusionInterface Trap Density +11

6F<sup>2</sup> buried wordline DRAM cell for 40nm and beyond

T. Schloesser, Frank Jakubowski, Johannes von Kluge, +20

Electrical EngineeringMemory ArchitectureEngineeringNm 6FEmerging Memory Technology +9

Reduced self-heating by strained silicon substrate engineering

A.G. O’Neill, R. Agaiby, Sarah H. Olsen, +12

Applied Surface Science

EngineeringMicrofabricationBias Temperature InstabilityApplied PhysicsSemiconductor Device Fabrication +4

Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Sarah H. Olsen, Liang Yan, R. Agaiby, +8

Microelectronic Engineering

Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsGate Dielectric Integrity +2

Gate leakage mechanisms in strained Si devices

Liang Yan, Sarah H. Olsen, Mohammed Benali Kanoun, +2

Journal of Applied Physics

Gate Leakage MechanismsElectrical EngineeringEngineeringStrained Si DevicesPhysics +8

Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

Sarah H. Olsen, Enrique Escobedo‐Cousin, John B. Varzgar, +12

IEEE Transactions on Electron Devices

Electrical EngineeringSige Device Self-heatingEngineeringThin Virtual SubstratesNanoelectronics +8

Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor

Dayu Zhou, Uwe Schroeder, Gunther Jegert, +6

Journal of Applied Physics

Materials ScienceStress VoltageElectrical EngineeringDielectricsEngineering +13

Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability

S. Kupke, Steve Knebel, Saifur Rahman, +4

Bipolar Ac StressEngineeringVlsi DesignDielectric WearDynamic Off-state Tddb +14

First Insight Into the Lifetime Acceleration Model of High-$k$$\hbox{ZrO}_{2}/\hbox{SiO}_{2}/\hbox{ZrO}_{2}$ Stacks for Advanced DRAM Technology Nodes

R. Agaiby, Philip Hofmann, Dayu Zhou, +5

IEEE Electron Device Letters

EngineeringEmerging Memory TechnologyComputer ArchitectureStabilityReliability Engineering +15

9‐4: Low Leakage Organic Backplanes for High Pixel Density Optical Sensors

Mike Banach, Steve Markham, R. Agaiby, +1

SID Symposium Digest of Technical Papers

Photonic SensorOptical MaterialsEngineeringOrganic ElectronicsOptoelectronic Devices +21