Mathieu Gavelle

Advanced activation of ultra-shallow junctions using flash-assisted RTP

W. Lerch, S. Paul, S. McCoy et al. · Materials Science and Engineering B · 2005 · 53 citations

Engineering, Electrical Engineering, Materials Science +13

Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(≤x≤1) composition

Mathieu Gavelle, El Mehdi Bazizi, E. Scheid et al. · Journal of Applied Physics · 2008 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +13

Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (⩽x⩽1) and germanium diffusion in silicon

Mathieu Gavelle, E. Scheid, F. Cristiano et al. · Journal of Applied Physics · 2007 · 29 citations

Natural Sciences, Chemistry, Materials Science +17

A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer

Saleem Hamady, F. Morancho, B. Beydoun et al. · 2013 · 15 citations

Engineering, Electrical Engineering, Materials Science +16

Defects evolution and dopant activation anomalies in ion implanted silicon

F. Cristiano, Y. Lamrani, F. Séverac et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2006 · 14 citations

Engineering, Materials Engineering, Materials Science +14