B. Beydoun

Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses

M. Alwan, B. Beydoun, K. Ketata et al. · Microelectronics Reliability · 2007 · 21 citations

Engineering, Electrical Engineering, Microelectronics +15

Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET

M. Alwan, B. Beydoun, K. Ketata et al. · Microelectronics Journal · 2007 · 20 citations

Engineering, Electrical Engineering, Microelectronics +16

A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer

Saleem Hamady, F. Morancho, B. Beydoun et al. · 2013 · 15 citations

Engineering, Electrical Engineering, Materials Science +16

Structural and electronic properties of Zn1−xMgxSySe1−y alloys

F. El Haj Hassan, A. Bleybel, Akram Hijazi et al. · Materials Letters · 2006 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +14

P-doped region below the AlGaN/GaN interface for normally-off HEMT

Saleem Hamady, Frédéric Morancho, B. Beydoun et al. · 2014 · 10 citations

Engineering, Electrical Engineering, Materials Science +17