Frédéric Morancho

TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation

M. Zerarka, P. Austin, A. Bensoussan et al. · IEEE Transactions on Nuclear Science · 2017 · 69 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications

M. Zerarka, P. Austin, G. Toulon et al. · IEEE Transactions on Electron Devices · 2012 · 57 citations

Engineering, Electrical Engineering, Microelectronics +16

A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

Loïc Théolier, H. Mahfoz-Kotb, Karine Isoird et al. · IEEE Electron Device Letters · 2009 · 46 citations

Natural Sciences, Electrical Engineering, Materials Science +16

A new junction termination technique: The Deep Trench Termination (DT<sup>2</sup>)

Loïc Théolier, H. Mahfoz-Kotb, Karine Isoird et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2009 · 29 citations

Engineering, Electrical Engineering, Circuit Theory +12

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Nedal Al Taradeh, Éric Frayssinet, Christophe Rodriguez et al. · Energies · 2021 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +17