Frédéric Morancho

TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation

M. Zerarka, P. Austin, A. Bensoussan et al. · IEEE Transactions on Nuclear Science · 2017 · 66 citations · Full text

Engineering, Power Electronics, Semiconductor Device +16

Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications

M. Zerarka, P. Austin, G. Toulon et al. · IEEE Transactions on Electron Devices · 2012 · 56 citations

Engineering, Power Devices, Energy Efficiency +22

A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

Loïc Théolier, H. Mahfoz-Kotb, Karine Isoird et al. · IEEE Electron Device Letters · 2009 · 46 citations

New Junction Termination, Electrical Engineering, Engineering +8

A new junction termination technique: The Deep Trench Termination (DT<sup>2</sup>)

Loïc Théolier, H. Mahfoz-Kotb, Karine Isoird et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2009 · 29 citations · Full text

Electrical Engineering, Engineering, High Voltage Engineering +11

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Nedal Al Taradeh, Éric Frayssinet, Christophe Rodriguez et al. · Energies · 2021 · 25 citations · Full text

Wide-bandgap Semiconductor, A-gan Crystallographic Planes, Engineering +18