A new junction termination technique: The Deep Trench Termination (DT<sup>2</sup>)

Abstract

Numerous techniques have been used to improve the voltage handling capability of high voltage power devices with the aim to obtain the breakdown of a plane junction. In this work, a new concept of low cost, low surface and high efficiency junction termination for power devices is presented and experimentally validated. This termination is based on a large and deep trench filled by BCB (BenzoCycloButene) associated to a field plate. Simulation results show the important impact of trench design and field plate width on termination performances. The experimental breakdown voltage of this Deep Trench Termination (DT <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) is close to 1300 Volts: this value validates not only the concept of the DT <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> but also the choice of the BCB as a good dielectric material for this termination.