Y. Lamrani

Ion beam induced defects in crystalline silicon

F. Cristiano, N. Cherkashin, X. Hebras et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 43 citations

Ion Implantation, Crystalline Silicon, Engineering +5

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

F. Cristiano, N. Cherkashin, Paulo Victor Cuesta Calvo et al. · Materials Science and Engineering B · 2004 · 33 citations

Electrical Engineering, Boron Nitride, Engineering +7

Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

B. Colombeau, N. E. B. Cowern, F. Cristiano et al. · Applied Physics Letters · 2003 · 29 citations · Full text

Engineering, Dislocation Interaction, Crystalline Defects +13

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

Paulo Victor Cuesta Calvo, A. Claverie, N. Cherkashin et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 23 citations

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

Y. Lamrani, F. Cristiano, B. Colombeau et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 22 citations

Materials Science, Ion Implantation, Engineering +11