N. Arefin

Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects

C. J. Dorow, Ashish Verma Penumatcha, A. Kitamura et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 49 citations

Engineering, Electrical Engineering, Materials Science +13

300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling

K. Maxey, Carl H. Naylor, Ashish Verma Penumatcha et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 34 citations

Engineering, Materials Engineering, Materials Science +17

Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS₂, WS₂, & WSe₂

C. J. Dorow, T. Schram, Quentin Smets et al. · 2023 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling

Ashish Verma Penumatcha, Kevin O’Brien, K. Maxey et al. · 2023 · 23 citations

Engineering, Electrical Engineering, Materials Science +15

Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length

Wouter Mortelmans, Pratyush Buragohain, Carly Rogan et al. · 2024 · 20 citations

Engineering, Electrical Engineering, Materials Science +17