Yusuke Niki

A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm<sup>2</sup> cell in 32nm high-<inf>k</inf> metal-gate CMOS

Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki et al. · 2010 · 44 citations

Non-volatile Memory, Electrical Engineering, Metal-gate Cmos +13

A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers

Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki et al. · IEEE Journal of Solid-State Circuits · 2011 · 38 citations

Low-power Electronics, Random-variation-tolerant Timing Generation, Electrical Engineering +15

A 27% Active and 85% Standby Power Reduction in Dual-Power-Supply SRAM Using BL Power Calculator and Digitally Controllable Retention Circuit

Fumihiko Tachibana, Osamu Hirabayashi, Y. Takeyama et al. · IEEE Journal of Solid-State Circuits · 2013 · 20 citations

Low-power Electronics, Active Mode, Electrical Engineering +10

A 47% access time reduction with a worst-case timing-generation scheme utilizing a statistical method for ultra low voltage SRAMs

Atsushi Kawasumi, Y. Takeyama, Osamu Hirabayashi et al. · 2012 · 10 citations

Low-power Electronics, Hardware Security, Electrical Engineering +15