Takahiko Sasaki

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein et al. · IEEE Journal of Solid-State Circuits · 2013 · 175 citations

Non-volatile Memory, Engineering, Vlsi Design +17

A 0.7 V Single-Supply SRAM With 0.495 $\mu$m$^{2}$ Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme

K. Kushida, Azuma Suzuki, Gou Fukano et al. · IEEE Journal of Solid-State Circuits · 2009 · 52 citations

Low-power Electronics, Electrical Engineering, Novel Sram Architecture +10

A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm<sup>2</sup> cell in 32nm high-<inf>k</inf> metal-gate CMOS

Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki et al. · 2010 · 44 citations

Non-volatile Memory, Electrical Engineering, Metal-gate Cmos +13

A 0.7V single-supply SRAM with 0.495um<sup>2</sup> cell in 65nm technology utilizing self-write-back sense amplifier and cascaded bit line scheme

K. Kushida, Azuma Suzuki, Gou Fukano et al. · 2008 · 17 citations

Low-power Electronics, Single-supply Sram, Electrical Engineering +13