Masaki Miyazato

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Takehiko Tawara, Tetsuya Miyazawa, Mina Ryo et al. · Journal of Applied Physics · 2016 · 118 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata et al. · Journal of Applied Physics · 2016 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS

Yusuke Kobayashi, Naoyuki Ohse, Tadao Morimoto et al. · 2017 · 75 citations

Engineering, Electrical Engineering, Electronic Materials +16

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

Takehiko Tawara, Shinichiro Matsunaga, Takumi Fujimoto et al. · Journal of Applied Physics · 2018 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki et al. · Japanese Journal of Applied Physics · 2018 · 44 citations

Engineering, Electrical Engineering, Materials Science +17