I. Trimaille

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

L.G. Gosset, J.-F. Damlencourt, O. Renault et al. · Journal of Non-Crystalline Solids · 2002 · 128 citations

Natural Sciences, Materials Engineering, Materials Science +11

Growth of SiO₂on SiC by dry thermal oxidation: mechanisms

I. Vickridge, Jean‐Jacques Ganem, Yasushi Hoshino et al. · Journal of Physics D Applied Physics · 2007 · 77 citations

Engineering, Materials Engineering, Materials Science +17

Use of 18O isotopic labelling to study thermal dry oxidation of silicon as a function of temperature and pressure

I. Trimaille, S. Rigo · Applied Surface Science · 1989 · 59 citations

Natural Sciences, Chemical Engineering, Chemistry +8

Mechanisms of Thermal Nitridation of Silicon

I. J. R. Baumvol, F. C. Stedile, J.‐J. Ganem et al. · Journal of The Electrochemical Society · 1995 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide

I. Vickridge, I. Trimaille, J.‐J. Ganem et al. · Physical Review Letters · 2002 · 38 citations · Full text

Engineering, Materials Engineering, Materials Science +17