F. C. Stedile

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Martin M. Frank, Yves J. Chabal, Martin L. Green et al. · Applied Physics Letters · 2003 · 116 citations

Materials Science, Hafnium Oxide, Engineering +14

SiC formation by reaction of Si(001) with acetylene: Electronic structure and growth mode

G. Dufour, F. Rochet, F. C. Stedile et al. · Physical review. B, Condensed matter · 1997 · 76 citations

Engineering, Chemistry, Silicon On Insulator +19

Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies

C. Radtke, I. J. R. Baumvol, Jonder Morais et al. · Applied Physics Letters · 2001 · 64 citations

X-ray Spectroscopy, Engineering, Oxidation Resistance +16

Organosilicon-modified silicas as support for zirconocene catalyst

João Henrique Zimnoch dos Santos, Paula Palmeira Greco, F. C. Stedile et al. · Journal of Molecular Catalysis A Chemical · 2000 · 61 citations

Inorganic Chemistry, Catalytic Material, Engineering +4

Dynamics of thermal growth of silicon oxide films on Si

Rita M. C. de Almeida, Sebastián Gonçalves, I. J. R. Baumvol et al. · Physical review. B, Condensed matter · 2000 · 50 citations · Full text