N. Bécourt

Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitors

T. Ouisse, N. Bécourt, C. Jaussaud et al. · Journal of Applied Physics · 1994 · 69 citations

Engineering, Materials Science, Physics +17

Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon

N. Bécourt, J.L. Ponthenier, Anne‐Marie Papon et al. · Physica B Condensed Matter · 1993 · 41 citations

Engineering, Materials Engineering, Materials Science +14

Electrical characterization of SiC for high-temperature thermal-sensor applications

C. Dézauzier, N. Bécourt, Gérald Arnaud et al. · Sensors and Actuators A Physical · 1995 · 29 citations

Engineering, Materials Engineering, Materials Science +14

High temperature silicon carbide MOSFETs with verylow drain leakage current

T. Billon, T. Ouisse, P. Lassagne et al. · Electronics Letters · 1994 · 24 citations

Engineering, Electrical Engineering, Materials Science +14

Strong element dependence of C 1s and Si 2p X-ray photoelectron diffraction profiles for identical C and Si local geometries in β-SiC

Sandrine Juillaguet, L. K�ubler, Mustapha Diani et al. · Surface Science · 1995 · 21 citations

Natural Sciences, Materials Science, Physics +15