High temperature silicon carbide MOSFETs with verylow drain leakage current

Abstract

Inversion mode n-channel MOSFETs have been built on (6H) silicon carbide (SiC) substrates, with thermal oxide as the gate insulator, and with channel lengths ranging from 1 to 25 µm. Drain leakage currents lower than 0.04 pA/µm channel width have been experimentally obtained at temperatures up to 400° C and Vd = 5V.