P. Morfouli - Concepedia

Author

P. Morfouli

Centre National de la Recherche Scientifique

Also Known As

Morfouli, P., Morfouli, Panagiota, P Morfouli, P. Morfouli, P., Morfouli, Panagiota Morfouli

Publications

344

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique CEA Grenoble Commissariat à l'Énergie Atomique et aux Énergies Alternatives North Carolina State University Université Grenoble Alpes

About

P. Morfouli is an author at Centre National de la Recherche Scientifique specializing in microelectronics, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	199
2	Applied Physics	6	6	174
3	Education	1	1	25
4	Chemical Engineering	1	1	20
5	Computer Engineering	1	1	21

P. Morfouli

Publications

236

Citations

H-Index

Page 1

	Year	Citations
Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films P. Morfouli, G. Ghibaudo, T. Ouisse, IEEE Electron Device Letters Nitrogen ConcentrationElectrical EngineeringEngineeringPhysicsNanoelectronics	1996	52
Copper direct bonding: An innovative 3D interconnect Pierric Gueguen, L. Di Cioccio, P. Morfouli, EngineeringInterconnect (Integrated Circuits)Wafer Scale ProcessingAdvanced Packaging (Semiconductors)Kelvin Structures	2010	34
Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition Eric M. Vogel, W. L. Hill, Veena Misra, IEEE Transactions on Electron Devices EngineeringP-channel MosfetsSih/sub 4/Semiconductor DeviceNanoelectronics	1996	31
The performance of micro heat pipes measured by integrated sensors M. Le Berre, Guillaume Pandraud, P. Morfouli, Journal of Micromechanics and Microengineering EngineeringMeasurementMechanical EngineeringHeat Sink TemperatureEducation	2006	25
High temperature silicon carbide MOSFETs with verylow drain leakage current T. Billon, T. Ouisse, P. Lassagne, Electronics Letters	1994	24
Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications F. Roy, Andrej Suler, Thomas Dalleau, Sensors EngineeringOptoelectronic DevicesIntegrated CircuitsImage SensorSemiconductor Device	2020	21
Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation C. Papadas, P. Morfouli, G. Ghibaudo, Solid-State Electronics Fowler-nordheim DegradationChemical EngineeringEngineeringSilicon DebuggingSurface Science	1991	20
Low temperature wafer bonding for thin silicon film transfer D. Goustouridis, K. Minoglou, S. Kolliopoulou, Sensors and Actuators A Physical Materials ScienceWafer Scale ProcessingEngineeringMicrofabricationApplied Physics	2003	16
Influence of quadratic mobility degradation factoron low frequency noise in MOS transistors Pascal Le Masson, G. Ghibaudo, Jean‐Luc Autran, Electronics Letters	1998	13

Page 1