J.L. Ponthenier

Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon

N. Bécourt, J.L. Ponthenier, Anne‐Marie Papon et al. · Physica B Condensed Matter · 1993 · 41 citations

Engineering, Materials Engineering, Materials Science +14

Electrical characterization of SiC for high-temperature thermal-sensor applications

C. Dézauzier, N. Bécourt, Gérald Arnaud et al. · Sensors and Actuators A Physical · 1995 · 29 citations

Engineering, Materials Engineering, Materials Science +14

Optical and magnetic diagnostics of the electric arc dynamics in a low voltage circuit breaker

C. Brdys, J.-P. Toumazet, Adèle D. Laurent et al. · Measurement Science and Technology · 2002 · 27 citations

Engineering, Electrical Engineering, Physics +13

High temperature silicon carbide MOSFETs with verylow drain leakage current

T. Billon, T. Ouisse, P. Lassagne et al. · Electronics Letters · 1994 · 24 citations

Engineering, Electrical Engineering, Materials Science +14

Characterization of the buffer layer in SiC heteroepitaxy

N. Bécourt, B. Cros, J.L. Ponthenier et al. · Applied Surface Science · 1993 · 18 citations

Engineering, Materials Engineering, Materials Science +14