K. Elgaid - Concepedia

Author

K. Elgaid

University of Glasgow ORCID

Also Known As

Elgaid, K., K ELGAID, K Elgaid, K. Elgaid, K. Elgaid. Y. Chen, Khaled Elgaid, Moran, D.A.J., Tracy Wotherspoon

159

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

University of Glasgow Cardiff University University of Cambridge University of Cincinnati University of Bristol

About

K. Elgaid is an author at University of Glasgow specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	28	612
2	Applied Physics	14	21	506
3	Natural Sciences	1	1	13
4	Social Sciences	1	1	17
5	Computer Engineering	1	1	17

K. Elgaid

Publications

704

Citations

H-Index

Page 1

	Year	Citations
Scaling of pseudomorphic high electron mobility transistors to decanano dimensions K. Kálna, S. Roy, Asen Asenov, Solid-State Electronics Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2002	55
Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition Haiping Zhou, K. Elgaid, C.D.W. Wilkinson, Japanese Journal of Applied Physics EngineeringSilicon On InsulatorPlasma ProcessingSemiconductor DeviceSemiconductors	2006	50
50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz K. Elgaid, H. McLelland, M. Holland, IEEE Electron Device Letters Electrical EngineeringEngineeringF/sub T/Rf SemiconductorHigh-frequency Device	2005	50
Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates Hareesh Chandrasekar, Michael J. Uren, Abdalla Eblabla, IEEE Electron Device Letters Substrate Ramp CharacterizationWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceGan Hemts	2018	35
Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit Arathy Varghese, Abdalla Eblabla, K. Elgaid IEEE Sensors Journal Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2021	32
High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band Applications Abdalla Eblabla, X. Li, Iain Thayne, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringLr Silicon SubstratesGan HemtsHigh-speed Electronics	2015	31
GaN-on-diamond technology platform: Bonding-free membrane manufacturing process Matthew D. Smith, Jerome A. Cuenca, D. Field, AIP Advances Materials ScienceWide-bandgap SemiconductorElectrical EngineeringDiamond-like CarbonEngineering	2020	30
Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology Hareesh Chandrasekar, Michael J. Uren, Michael A. Casbon, IEEE Transactions on Electron Devices	2019	29
Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon Bhavana Benakaprasad, Abdalla Eblabla, Xu Li, IEEE Transactions on Electron Devices	2020	29
40 to 90 GHz impedance-transforming CPW Marchand balun Kian Siong Ang, I.D. Robertson, K. Elgaid, Electrical EngineeringEngineeringRadio FrequencyRf SemiconductorExcellent Performance	2002	24

Page 1