H. McLelland

50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz

K. Elgaid, H. McLelland, M. Holland et al. · IEEE Electron Device Letters · 2005 · 50 citations

Electrical Engineering, Engineering, F/sub T/ +10

Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

David A. J. Moran, Oliver Fox, H. McLelland et al. · IEEE Electron Device Letters · 2011 · 47 citations

Semiconductor Technology, Diamond-like Carbon, Electrical Engineering +9

Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack

Y. Chen, D.S. Macintyre, Xiehong Cao et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 28 citations

Electrical Engineering, Engineering, Gate Lithography +13

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

David A. J. Moran, H. McLelland, K. Elgaid et al. · IEEE Transactions on Electron Devices · 2006 · 24 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

Photoluminescence intensity and multiple phonon Raman scattering in quantum dots: evidence of the bottleneck effect

P.D. Wang, H. McLelland, S. Thoms et al. · Surface Science · 1994 · 21 citations

Photonics, Photoluminescence, Engineering +9