H. McLelland - Concepedia

Author

H. McLelland

University of Glasgow

Also Known As

H McLelland, H. McLelland, Helen McLelland, McLelland, H., McLelland, Helen, Mclelland, Helen

Publications

306

Citations

H-Index

Concepts

All Affiliations

University of Glasgow

About

H. McLelland is an author at University of Glasgow specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	207
2	Applied Physics	7	7	196
3	Electrical Engineering	7	7	186
4	Physics	3	3	63
5	Antenna	1	1	11

H. McLelland

Publications

231

Citations

H-Index

Page 1

	Year	Citations
50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz K. Elgaid, H. McLelland, M. Holland, IEEE Electron Device Letters Electrical EngineeringEngineeringF/sub T/Rf SemiconductorHigh-frequency Device	2005	50
Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions David A. J. Moran, Oliver Fox, H. McLelland, IEEE Electron Device Letters Semiconductor TechnologyDiamond-like CarbonElectrical EngineeringSemiconductor DeviceEngineering	2011	47
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack Y. Chen, D.S. Macintyre, Xiehong Cao, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Electrical EngineeringEngineeringGate LithographyPhysicsRf Semiconductor	2003	28
50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node David A. J. Moran, H. McLelland, K. Elgaid, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringContinued Research	2006	24
Photoluminescence intensity and multiple phonon Raman scattering in quantum dots: evidence of the bottleneck effect P.D. Wang, H. McLelland, S. Thoms, Surface Science PhotonicsPhotoluminescenceEngineeringPhysicsOptical Properties	1994	21
Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates David A. J. Moran, E. Boyd, H. McLelland, Microelectronic Engineering Electrical EngineeringEngineeringRf SemiconductorPhysicsNovel Technologies	2003	14
50 nm metamorphic GaAs and InP HEMTs Iain Thayne, K. Elgaid, David A. J. Moran, Thin Solid Films Electrical EngineeringEngineeringRf SemiconductorApplied PhysicsNm Metamorphic Gaas	2006	12
Gate recess engineering of pseudomorphic In <sub>0.30</sub> GaAs/GaAsHEMTs N.I. Cameron, S. Murad, H. McLelland, Electronics Letters	1996	12
Metamorphic GaAs HEMTs with f <sub>T</sub> of 200 GHz D.L. Edgar, N.I. Cameron, H. McLelland, Electronics Letters	1999	12
A 77 GHz coplanar waveguide MMIC BPSK vector modulator realised using InP technology T. Lodhi, D.L. Edgar, H. McLelland, Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorBalanced Reflection Topology	2002	11

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