Hareesh Chandrasekar

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

Manikant Singh, Michael J. Uren, Trevor Martin et al. · IEEE Transactions on Electron Devices · 2018 · 46 citations · Full text

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

Hareesh Chandrasekar, Michael J. Uren, Abdalla Eblabla et al. · IEEE Electron Device Letters · 2018 · 35 citations · Full text

Substrate Ramp Characterization, Wide-bandgap Semiconductor, Electrical Engineering +13

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

Hareesh Chandrasekar, Towhidur Razzak, Caiyu Wang et al. · Advanced Electronic Materials · 2020 · 30 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +9

Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology

Hareesh Chandrasekar, Michael J. Uren, Michael A. Casbon et al. · IEEE Transactions on Electron Devices · 2019 · 29 citations · Full text

Substrate Effects in GaN-on-Silicon RF Device Technology

Hareesh Chandrasekar · International Journal of High Speed Electronics and Systems · 2019 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13