Towhidur Razzak - Concepedia

Author

Towhidur Razzak

The Ohio State University ORCID

Also Known As

Razzak, Towhidur, T. Razzak, Towhidur Razzak

Publications

499

Citations

H-Index

Concepts

All Affiliations

The Ohio State University University of South Carolina Qorvo (United States)Sandia National Laboratories

About

Towhidur Razzak is an author at The Ohio State University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	442
2	Applied Physics	13	13	442
3	Electrical Engineering	13	13	442
4	Materials Science	3	3	112
5	Physics	3	3	92

Towhidur Razzak

Publications

452

Citations

H-Index

Page 1

	Year	Citations
High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm Sanyam Bajaj, Andrew A. Allerman, Andrew Armstrong, IEEE Electron Device Letters Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	2017	58
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN<sub>x</sub> Passivation Shahadat H. Sohel, Mohammad Wahidur Rahman, Andy Xie, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringDispersion Behavior	2019	56
X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors Shahadat H. Sohel, Andy Xie, Edward Beam, IEEE Electron Device Letters Electrical EngineeringElectronic DevicesEngineeringSemiconductor DeviceNanoelectronics	2018	50
Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications Shahadat H. Sohel, Andy Xie, Edward Beam, IEEE Electron Device Letters SemiconductorsGraded Ingan Sub-channelElectrical EngineeringElectronic DevicesEngineering	2019	43
Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>0.6</sub>Ga<sub>0.4</sub>N heterojunction field effect transistor with f<sub>T</sub> of 40 GHz Hao Xue, Choong Hee Lee, Kamal Hussian, Applied Physics Express Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2019	40
Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.4</sub>Ga<sub>0.6</sub>N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm Hao Xue, Kamal Hussain, Towhidur Razzak, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringOutput Power DensityEngineeringPhysics	2020	31
All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors Hao Xue, Seongmo Hwang, Towhidur Razzak, Solid-State Electronics Aluminium NitrideElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2019	30
Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates Hareesh Chandrasekar, Towhidur Razzak, Caiyu Wang, Advanced Electronic Materials Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2020	30
Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors Mohammad Wahidur Rahman, Nidhin Kurian Kalarickal, Hyunsoo Lee, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsTime-dependent Dielectric Breakdown	2021	26
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2020	24

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