Andy Xie

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

Yan Zhou, J. Anaya, James W. Pomeroy et al. · ACS Applied Materials & Interfaces · 2017 · 151 citations

Engineering, Materials Engineering, Materials Science +17

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

Andrew J. Green, J. Gillespie, Robert Fitch et al. · IEEE Electron Device Letters · 2019 · 127 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Ming Xiao, Yunwei Ma, Kai Cheng et al. · IEEE Electron Device Letters · 2020 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

Andrew J. Green, Neil Moser, Nicholas C. Miller et al. · IEEE Electron Device Letters · 2020 · 82 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN_x Passivation

Shahadat H. Sohel, Mohammad Wahidur Rahman, Andy Xie et al. · IEEE Electron Device Letters · 2019 · 61 citations

Engineering, Electrical Engineering, Materials Science +16