Shahadat H. Sohel

$\beta$ -Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Zhanbo Xia, Hao Xue, Chandan Joishi et al. · IEEE Electron Device Letters · 2019 · 159 citations

Engineering, Electrical Engineering, Materials Science +17

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Sanyam Bajaj, Andrew A. Allerman, Andrew Armstrong et al. · IEEE Electron Device Letters · 2017 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN_x Passivation

Shahadat H. Sohel, Mohammad Wahidur Rahman, Andy Xie et al. · IEEE Electron Device Letters · 2019 · 61 citations

Engineering, Electrical Engineering, Materials Science +16

X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

Shahadat H. Sohel, Andy Xie, Edward Beam et al. · IEEE Electron Device Letters · 2018 · 52 citations

Engineering, Electrical Engineering, Materials Science +16

Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications

Shahadat H. Sohel, Andy Xie, Edward Beam et al. · IEEE Electron Device Letters · 2019 · 45 citations

Engineering, Electrical Engineering, Materials Science +17