Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition

Abstract

A novel room-temperature inductively coupled plasma chemical vapour deposition (ICP–CVD) technique has been developed, which yielded high-quality silicon nitride (SiN) films with a hydrogen content of less than 3 at. %. The chemical composition and bonding of the films were analysed by energy dispersive X-ray (EDX) analysis, secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FTIR). The film optical indexes measured by ellipsometry were well correlated with film composition. Very little plasma-induced damage was observed on Van de Pauw samples of GaAs-based high-electron-mobility transistor (HEMT) layer structures grown by molecular beam epitaxy (MBE). Breakdown electric field >4×10 6 V cm -1 was observed for an ultrathin 5 nm room-temperature-grown ICP–CVD SiN film embedded in a metal-insulator-metal (MIM) capacitor structure. This technique has been successfully incorporated into the III–V MMIC process flow to provide significant flexibility towards realising array-based MMICs.