Nae-In Lee

Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant

Hong Bae Park, Moonju Cho, Jaehoo Park et al. · Journal of Applied Physics · 2003 · 120 citations

Engineering, Larger Oxygen Concentration, Oxidation Resistance +17

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al₂O₃/p-Si Metal–Oxide–Semiconductor Capacitor

In Sang Jeon, Jaehoo Park, Dail Eom et al. · Japanese Journal of Applied Physics · 2003 · 53 citations

Materials Science, Semiconductors, Electrical Engineering +13

Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Hyung‐Suk Jung, So-Ah Lee, Sang-Ho Rha et al. · IEEE Transactions on Electron Devices · 2011 · 40 citations

Engineering, Crystal Growth Technology, Gate-dielectric Films +18

Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate

Won-Kyu Kim, Shi‐Woo Rhee, Nae-In Lee et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2004 · 35 citations · Full text

Materials Science, Materials Engineering, Engineering +13

The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO₂Films on Ge Substrate

Hyung‐Suk Jung, Sang Ho Jeon, Hyo Kyeom Kim et al. · ECS Journal of Solid State Science and Technology · 2012 · 35 citations