Dail Eom

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al₂O₃/p-Si Metal–Oxide–Semiconductor Capacitor

In Sang Jeon, Jaehoo Park, Dail Eom et al. · Japanese Journal of Applied Physics · 2003 · 53 citations

Materials Science, Semiconductors, Electrical Engineering +13

Properties of lanthanum oxide thin films deposited by cyclic chemical vapor deposition using tris(isopropyl-cyclopentadienyl)lanthanum precursor

Sang Yong No, Dail Eom, Cheol Seong Hwang et al. · Journal of Applied Physics · 2006 · 51 citations

Materials Science, Semiconductors, Lanthanum Precursor +13

Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

Kuan Yew Cheong, Jeong Hyun Moon, Dail Eom et al. · Electrochemical and Solid-State Letters · 2006 · 42 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Property Changes of Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition under Photon Radiation

Sang Yong No, Dail Eom, Cheol Seong Hwang et al. · Journal of The Electrochemical Society · 2006 · 32 citations

Materials Science, Surface Technology, Engineering +15

Properties of Aluminum Nitride Thin Films Deposited by an Alternate Injection of Trimethylaluminum and Ammonia under Ultraviolet Radiation

Dail Eom, Sang Yong No, Cheol Seong Hwang et al. · Journal of The Electrochemical Society · 2006 · 32 citations

Aluminium Nitride, Ultraviolet Radiation, Engineering +16