Hyo Kyeom Kim

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

Min Hyuk Park, Han‐Joon Kim, Yu Jin Kim et al. · Applied Physics Letters · 2013 · 178 citations

Materials Engineering, Materials Science, Multiferroics +15

Stabilization of Tetragonal HfO₂ under Low Active Oxygen Source Environment in Atomic Layer Deposition

Deok‐Yong Cho, Hyung Suk Jung, Il-Hyuk Yu et al. · Chemistry of Materials · 2012 · 105 citations

Oxygen Reduction Reaction, Engineering, Photochemistry +14

Effects of O₃ and H₂O as oxygen sources on the atomic layer deposition of HfO₂ gate dielectrics at different deposition temperatures

Sang‐Young Lee, Hyo Kyeom Kim, Jong-Ho Lee et al. · Journal of Materials Chemistry C · 2014 · 50 citations

Engineering, Oxidation Resistance, Crystal Growth Technology +17

Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO₂ Film

Woojin Jeon, Sijung Yoo, Hyo Kyeom Kim et al. · ACS Applied Materials & Interfaces · 2014 · 41 citations

Materials Engineering, Materials Science, Material Analysis +14

Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Hyung‐Suk Jung, So-Ah Lee, Sang-Ho Rha et al. · IEEE Transactions on Electron Devices · 2011 · 40 citations

Engineering, Crystal Growth Technology, Gate-dielectric Films +18