Il-Hyuk Yu

Stabilization of Tetragonal HfO₂ under Low Active Oxygen Source Environment in Atomic Layer Deposition

Deok‐Yong Cho, Hyung Suk Jung, Il-Hyuk Yu et al. · Chemistry of Materials · 2012 · 110 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of O₃ and H₂O as oxygen sources on the atomic layer deposition of HfO₂ gate dielectrics at different deposition temperatures

Sang‐Young Lee, Hyo Kyeom Kim, Jong-Ho Lee et al. · Journal of Materials Chemistry C · 2014 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +17

The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO₂Films on Ge Substrate

Hyung‐Suk Jung, Sang Ho Jeon, Hyo Kyeom Kim et al. · ECS Journal of Solid State Science and Technology · 2012 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +15

Scaling of equivalent oxide thickness of atomic layer deposited HfO2 film using RuO2 electrodes suppressing the dielectric dead-layer effect

Hyo Kyeom Kim, Il-Hyuk Yu, Jae Ho Lee et al. · Applied Physics Letters · 2012 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +17

Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$

Hyo Kyeom Kim, Sang‐Young Lee, Il-Hyuk Yu et al. · IEEE Electron Device Letters · 2012 · 20 citations

Engineering, Electrical Engineering, Materials Science +13