Concepedia

M. Takikawa

MT

26

Publications

895

Citations

19

H-Index

1976

Active since

Affiliations

Fujitsu (Japan)(Current)

The University of Tokyo

Tokyo University of Science

M. Takikawa is an author at Fujitsu (Japan) specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsOptoelectronicsPhysicsNanoelectronicsSemiconductorsElectronic EngineeringSurface Science

Publications per year

1976–2013

26

Publications

26

Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition

Osamu Ueda, M. Takikawa, J. Komeno et al. · Japanese Journal of Applied Physics · 1987 · 134 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +15

A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications

K. Joshin, T. Kikkawa, Hiroyuki Hayashi et al. · 2004 · 96 citations

Wide-bandgap Semiconductor, Drain Supply Voltage, Electrical Engineering +9

Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers

M. Takikawa, K. Joshin · IEEE Electron Device Letters · 1993 · 60 citations

Semiconductor Technology, Electrical Engineering, Engineering +7

MOCVD-grown InGaN-channel HEMT structures with electron mobility of over

Naoya Okamoto, Katsuyuki Hoshino, Naoki Hara et al. · Journal of Crystal Growth · 2004 · 58 citations

Electrical Engineering, Engineering, Applied Physics +2

Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition

Osamu Ueda, M. Takikawa, Masaru Takechi et al. · Journal of Crystal Growth · 1988 · 52 citations

Electrical Engineering, Epitaxial Growth, Engineering +9

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