Katsuyuki Hoshino

A gallium nitride single-photon source operating at 200 K

Satoshi Kako, Charles Santori, Katsuyuki Hoshino et al. · Nature Materials · 2006 · 432 citations

Photonics, Quantum Photonics, Engineering +6

MOCVD-grown InGaN-channel HEMT structures with electron mobility of over

Naoya Okamoto, Katsuyuki Hoshino, Naoki Hara et al. · Journal of Crystal Growth · 2004 · 58 citations

Electrical Engineering, Engineering, Applied Physics +2

Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

Masahiro Araki, Noriaki Mochimizo, Katsuyuki Hoshino et al. · Japanese Journal of Applied Physics · 2007 · 45 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +15

GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding

Shoichi Kawashima, Takeshi KAWASHIMA, Yasuhiro Nagatomo et al. · Applied Physics Letters · 2010 · 38 citations

Optical Materials, Engineering, Two-dimensional Photonic Crystal +18

Effect of Misorientation Angle of r-Plane Sapphire Substrate on a-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy

Masahiro Araki, Noriaki Mochimizo, Katsuyuki Hoshino et al. · Japanese Journal of Applied Physics · 2008 · 27 citations