MOCVD-grown InGaN-channel HEMT structures with electron mobility of over - Concepedia

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MOCVD-grown InGaN-channel HEMT structures with electron mobility of over

58

Citations

13

References

2004

Year

Naoya Okamoto, Katsuyuki Hoshino, Naoki Hara, M. Takikawa, Yasuhiko Arakawa

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsCategoryiii-v SemiconductorMocvd-grown Ingan-channel Hemt

References

	Year	Citations

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